| Abstract |
The undoped and boron doped amorphous carbon film were fabricated on
n-type bulk silicon to form p-n abrupt junction. The amorphous carbon film is
obtained from cooking palm oil by using a custom-made pyrolysis chemical
vapor deposition. FESEM and EDS show a successful carbon and boron
deposited on the n-type silicon substrates. The rectifying nature of
photovoltaic films. The open circuit voltage (Voc), current density (JSC), fill
factor (FF) and efficiency (η) of undoped Au/a-C/n-Si/Au were approximately
0.111V, 0.029mA/cm2, 0.2999, and 0.01919%, respectively. Meanwhile, the
VOC, JSC, FF and efficiency of Au/a-C:B/n-Si/Au were 0.265V,
1.505mA/cm2, 0.327, and 0.1302%, respectively. The efficiency is found to
be increased from 0.01919 % to 0.1302 % by the used of boron
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